Description
Electron beam lithography uses a focused fine electron beam to scan a pattern specifically designed across a substrate surface covered with a film of resist. Depending on the polarity, resist in exposed areas of electron beam scan will either be removed or remain after the developing process. Electron beam lithography can create nanometer scale structures in the resist that can subsequently be transferred to the substrate material. Subsequent etching or growing materials are often processed to create nano structures. The Raith 50 electron beam lithography has a sub 100nm line width resolution with direct write capability on 2” sample and run at a highest energy level at 30keV.
ManufacturerRAITH GMBH
ModelRAITH50